NISHIO Hirokazu[Translate]
Solid-state drive
>The process of moving electrons from the control gate and into the floating gate is called the Fowler-Nordheim tunneling effect, and it fundamentally changes the characteristics of the cell by increasing the MOSFET’s threshold voltage.


en
"Engineer's way of creating knowledge" the English version of my book is now available on [Engineer's way of creating knowledge]

(C)NISHIO Hirokazu / Converted from [Scrapbox] at [Edit]